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Vishay | SIR622DP-T1-GE3

Manufacturer Part #

SIR622DP-T1-GE3

N-Channel 150 V (D-S) MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2607
Product Specification Section
Vishay SIR622DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 17.7mΩ
Rated Power Dissipation: 104W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 51.6A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 18ns
Rise Time: 6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Input Capacitance: 1516pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7,350.00
USD
Quantity
Unit Price
3,000+
$2.45
Product Variant Information section