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Manufacturer Part #

SIRA90DP-T1-GE3

MOSFET N-CH 30V 100A PPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIRA90DP-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.8mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 102nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 65.8A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 46ns
Rise Time: 16ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 10180pF
Series: TrenchFET
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
48 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,930.00
USD
Quantity
Unit Price
3,000
$0.665
6,000
$0.655
9,000
$0.65
12,000+
$0.645
Product Variant Information section