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Manufacturer Part #

SIS862ADN-T1-GE3

Single N-Channel 60 V 7.2 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
Vishay SIS862ADN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.2mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 19.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 15.8A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 20ns
Rise Time: 6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 1235pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
6,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
50 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,190.00
USD
Quantity
Unit Price
3,000
$0.365
9,000
$0.36
15,000+
$0.355
Product Variant Information section