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Manufacturer Part #

SISA35DN-T1-GE3

P-Channel 30V 19 mΩ PowerPAK 1212-8 MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SISA35DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 19mΩ
Rated Power Dissipation: 3.2W
Qg Gate Charge: 28nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 23ns
Rise Time: 18ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 1500pF
Series: TrenchFET
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$750.00
USD
Quantity
Unit Price
3,000
$0.125
9,000
$0.123
30,000
$0.121
45,000+
$0.119
Product Variant Information section