text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. SISH625DN-T1-GE3

Vishay | SISH625DN-T1-GE3

Manufacturer Part #

SISH625DN-T1-GE3

40V,30A,9.2MOH,NP-CH,LFPAK

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SISH625DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 7mΩ
Rated Power Dissipation: 52W
Qg Gate Charge: 126nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 35A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 55ns
Rise Time: 13ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 4427pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,820.00
USD
Quantity
Unit Price
3,000
$0.94
6,000+
$0.92
Product Variant Information section