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Vishay | SISS12DN-T1-GE3

Manufacturer Part #

SISS12DN-T1-GE3

N-Channel 40 V 1.98 mOhm 65.7 W TrenchFET Gen IV Power Mosfet - PowerPAK 1212-8S

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SISS12DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.98mΩ
Rated Power Dissipation: 5W
Qg Gate Charge: 59nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 37.5A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 28ns
Rise Time: 27ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: PowerTrench
Input Capacitance: 4270pF
Mounting Method: Surface Mount
Features & Applications

Vishay Intertechnology has introduced new 40V and 60V parts in the fourth generation of its TrenchFET® N-channel power MOSFET family, offering increased efficiency and power density in power-conversion circuits.

APPLICATIONS
• Synchronous rectification in AC-DC power supplies
• Telecoms equipment
• Servers
• Medical equipment
• Motor-drive control
• Battery protection and charging

FEATURES
• Output capacitance:
 – 680pF for SiSS12DN
 – 565pF for SiSS22DN
• Gate charge:
 – 28.7nC for SiSS12DN
 – 22.5nC for SiSS22DN
• Output charge:
 – 28nC for SiSS12DN
 – 34nC for SiSS22DN

Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$7,620.00
USD
Quantity
Unit Price
3,000+
$1.27
Product Variant Information section