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Infineon | SPD02N80C3ATMA1

Manufacturer Part #

SPD02N80C3ATMA1

Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2544
Product Specification Section
Infineon SPD02N80C3ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 2.7Ω
Rated Power Dissipation: 42W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 72ns
Rise Time: 15ns
Fall Time: 18ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 290pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,200.00
USD
Quantity
Unit Price
2,500
$0.48
5,000
$0.475
10,000
$0.47
12,500+
$0.46
Product Variant Information section