
Manufacturer Part #
SPD02N80C3ATMA1
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
Product Specification Section
Infineon SPD02N80C3ATMA1 - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon SPD02N80C3ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 800V |
Drain-Source On Resistance-Max: | 2.7Ω |
Rated Power Dissipation: | 42W |
Qg Gate Charge: | 12nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2A |
Turn-on Delay Time: | 25ns |
Turn-off Delay Time: | 72ns |
Rise Time: | 15ns |
Fall Time: | 18ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Input Capacitance: | 290pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
2,500
$0.39
5,000
$0.385
7,500+
$0.38
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount