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Vishay | SQ1912EH-T1_GE3

Manufacturer Part #

SQ1912EH-T1_GE3

MOSFET 2 N-CH 20V 800MA SC70-6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2548
Product Specification Section
Vishay SQ1912EH-T1_GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 280mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 1.15nC
Gate-Source Voltage-Max [Vgss]: ±8V
Drain Current: 800mA
Turn-on Delay Time: 5ns
Turn-off Delay Time: 29ns
Rise Time: 31ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.5V
Height - Max: 1.1mm
Length: 2.2mm
Input Capacitance: 75pF
Series: TrenchFET®
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
15,000
USA:
15,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,650.00
USD
Quantity
Unit Price
3,000
$0.55
6,000
$0.545
9,000
$0.54
12,000
$0.535
15,000+
$0.53
Product Variant Information section