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Manufacturer Part #

SQ4940AEY-T1_GE3

Dual N-Channel 40 V 0.024 Ohm 28.4 nC TrenchFET® Automotive Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQ4940AEY-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 4W
Qg Gate Charge: 28.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 20ns
Rise Time: 13ns
Fall Time: 9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 593pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,225.00
USD
Quantity
Unit Price
2,500
$0.49
5,000
$0.485
7,500
$0.48
12,500+
$0.47
Product Variant Information section