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Manufacturer Part #
SQJ457EP-T1_GE3
Single P-Channel 60 V 25 mOhm 68 W SMT Automotive Power Mosfet - PowerPAK SO-8L
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:POWERPAK-SO-8L Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SQJ457EP-T1_GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: In order to increase front end capacity, Vishay is transferring some production of select part numbers to Vishay Newport Limited located in Newport, Wales UK. A list of affected parts and their Newport counterparts can be found on page 3 of this PCN.Reason for Change: Capacity Expansion
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SQJ457EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sqj457ep-t1-ge3-vishay-2086446
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SQJ457EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sqj457ep-t1-ge3-vishay-2086446
Vishay SQJ457EP-T1_GE3 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 25mΩ |
| Rated Power Dissipation: | 68W |
| Qg Gate Charge: | 60nC |
| Gate-Source Voltage-Max [Vgss]: | ± 20V |
| Drain Current: | 30A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 5ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Technology: | TrenchMOS |
| Height - Max: | 1.07m |
| Length: | 6.15m |
| Input Capacitance: | 2600pF |
| Package Style: | POWERPAK-SO-8L |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Package Style:
POWERPAK-SO-8L
Mounting Method:
Surface Mount