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Manufacturer Part #

STB120N4F6

N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1706
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 4mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 65nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB120N4F6 is a product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Features:

  • Standard threshold drive
  • 100% avalanche tested

Application:

  • Switching applications
  • Automotive
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Total
$810.00
USD
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
50
$0.81
2,000
$0.66
3,000
$0.655
4,000+
$0.65
Product Variant Information section