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STMicroelectronics | STB5N80K5

Manufacturer Part #

STB5N80K5

N-Channel 800 V 4 A MDmesh™ K5 Power Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB5N80K5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.75Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 4A
Turn-on Delay Time: 12.7ns
Turn-off Delay Time: 23ns
Rise Time: 11.7ns
Fall Time: 14.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 177pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$965.00
USD
Quantity
Unit Price
1,000
$0.965
2,000
$0.955
3,000
$0.945
4,000
$0.94
5,000+
$0.925
Product Variant Information section