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STMicroelectronics | STD4NK80Z-1

Manufacturer Part #

STD4NK80Z-1

N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD4NK80Z-1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.5Ω
Rated Power Dissipation: 80W
Qg Gate Charge: 22.5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 35ns
Rise Time: 12ns
Fall Time: 32ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 575pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,895.00
USD
Quantity
Unit Price
3,000
$0.965
6,000+
$0.945
Product Variant Information section