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Manufacturer Part #

STF15NM65N

Single N-Channel 650 V 30 W 33.3 nC Silicon Through Hole Mosfet - TO-220FP

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STF15NM65N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 30W
Qg Gate Charge: 33.3nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 12A
Turn-on Delay Time: 55.5ns
Turn-off Delay Time: 14ns
Rise Time: 8.5ns
Fall Time: 11.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 16.4mm
Length: 10.4mm
Input Capacitance: 983pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,450.00
USD
Quantity
Unit Price
50
$2.52
200
$2.48
500
$2.45
1,250
$2.43
2,000+
$2.39
Product Variant Information section