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Manufacturer Part #

STP13NM60N

N-Channel 600 V 11 A 0.36 Ohm Flange Mount MDmesh™ II Power MOSFET-TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 360mΩ
Rated Power Dissipation: 90|W
Qg Gate Charge: 27nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP13NM50 devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
38 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,270.00
USD
Quantity
Web Price
50
$2.80
150
$2.40
250
$2.37
1,000
$2.27
1,500+
$2.24
Product Variant Information section