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Manufacturer Part #

STP57N65M5

N-Channel 650 V 42 A 250 W Through Hole MDmesh™ V Power MOSFET - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP57N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.063Ω
Rated Power Dissipation: 250W
Qg Gate Charge: 98nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 42A
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 5.87mm
Length: 10.4mm
Input Capacitance: 4200pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
24 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$8,290.00
USD
Quantity
Unit Price
3
$8.64
15
$8.54
50
$8.48
150
$8.41
500+
$8.29
Product Variant Information section