Manufacturer Part #
STW45NM50
N-Channel 500 V 0.1 Ω 87 nC Flange Mount MDmesh Power Mosfet - TO-247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2509 | ||||||||||
Product Specification Section
STMicroelectronics STW45NM50 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STW45NM50 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.1Ω |
| Rated Power Dissipation: | 417|W |
| Qg Gate Charge: | 87nC |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Features & Applications
The STW45NM50 MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
Features:
- 100% avalanche tested
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications:
- Switching applications
Pricing Section
Global Stock:
7,825
USA:
7,825
Factory Lead Time:
20 Weeks
Quantity
Unit Price
1
$5.37
15
$5.30
50
$5.26
200
$5.22
750+
$5.13
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole