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Manufacturer Part #

SUD19P06-60-GE3

Single P-Channel 60 V 0.06 Ohms Surface Mount Power Mosfet - TO-252

Product Specification Section
Vishay SUD19P06-60-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 38.5|W
Qg Gate Charge: 40nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The SUD19P06-60-GE3 is a P-Channel 60 V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TO-252 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Applications:

  • High Side Switch for Full Bridge Converter
  • DC/DC Converter for LCD Display
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2000
Multiple Of:
2000
Total
$650.00
USD
Quantity
Unit Price
2,000
$0.325
4,000
$0.32
6,000
$0.315
10,000+
$0.31