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Manufacturer Part #
TN0110N3-G
TN0110 Series 100 V 3 Ohm N-Channel Enhancement-Mode Vertical DMOS FET - TO-92
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| Mfr. Name: | Microchip | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Bag Package Style:TO-92 Mounting Method:Through Hole | ||||||||||
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Microchip TN0110N3-G - Product Specification
Shipping Information:
ECCN:
PCN Information:
*** Update for PCN 111842 /Location Change***Description of Change: Qualification of Microchip Technology Colorado ? Fab 5 (MCSO) as a new fabrication site for multiple device families of DMOS2.5 (63K, 6K, 6FK, 6GK, 6HK) technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (MCSO - FAB 5), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand. *Note: The attached file called Tempe_Fab2_IATF_Decertification is for the manufacturing site deactivation of Microchip Technology Tempe ? Fab 2 (TMGR), contact your local Microchip sales office for inquiries.Estimated First Ship Date: 08 October 2025 (date code: 2541)Revision History: March 26, 2025: Issued initial notification. September 04, 2025: Issued final notification. Attached the Qualification Report. Provided estimated first ship date to be on October 08, 2025.
Description of Change: Qualification of Microchip Technology Colorado ? Fab 5 (MCSO) as a new fabrication site for multiple device families of DMOS2.5 (63K, 6K, 6FK, 6GK, 6HK) technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (MCSO - FAB 5), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand. *Note: The attached file called Tempe_Fab2_IATF_Decertification is for the manufacturing site deactivation of Microchip Technology Tempe ? Fab 2 (TMGR), contact your local Microchip sales office for inquiries.Estimated Qualification Completion Date: July 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=TN0110N3-G&field4=Microchip&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/tn0110n3-g-microchip-6067635
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=TN0110N3-G&field4=Microchip&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/tn0110n3-g-microchip-6067635
Microchip TN0110N3-G - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 1|W |
| Package Style: | TO-92 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
1000 per Bag
Package Style:
TO-92
Mounting Method:
Through Hole