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Taiwan Semiconductor | TSM160N10LCR RLG

Manufacturer Part #

TSM160N10LCR RLG

N-Channel 100 V 46 A 83 W Surface Mount Power MOSFET - PDFN56-8

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2429
Product Specification Section
Taiwan Semiconductor TSM160N10LCR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 2.6W
Qg Gate Charge: 73nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 6.2ns
Turn-off Delay Time: 35ns
Rise Time: 19ns
Fall Time: 21ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Technology: TrenchMOS
Input Capacitance: 4431pF
Package Style:  PDFN-8
Mounting Method: Screw Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,050.00
USD
Quantity
Unit Price
2,500
$0.82
5,000
$0.81
7,500
$0.80
10,000+
$0.795
Product Variant Information section