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Taiwan Semiconductor | TSM60NE048PW C0G

Manufacturer Part #

TSM60NE048PW C0G

600V, 61A, Single N-Channel High Voltage MOSFETs

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2403
Product Specification Section
Taiwan Semiconductor TSM60NE048PW C0G - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 44mΩ
Rated Power Dissipation: 431W
Qg Gate Charge: 114nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 61A
Turn-on Delay Time: 74ns
Turn-off Delay Time: 95ns
Rise Time: 45ns
Fall Time: 34ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.7V
Input Capacitance: 5023pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
900
USA:
900
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
300
Multiple Of:
300
Total
$5,790.00
USD
Quantity
Unit Price
300+
$19.30
Product Variant Information section