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Manufacturer Part #
IMBG120R090M1HXTMA1
SiC, 1200V, 26A, 90MOHM, N-CHANNEL, PG-TO263-7
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2348 | ||||||||||
Product Specification Section
Infineon IMBG120R090M1HXTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Material Supplier Change
05/13/2025 Details and Download
Part Status:
Active
Active
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Infineon IMBG120R090M1HXTMA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 26A |
| Input Capacitance: | 763pF |
| Power Dissipation: | 136W |
| Operating Temp Range: | -55°C to +175°C |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
1,000+
$3.43
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Mounting Method:
Surface Mount