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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMBG120R090M1HXTMA1

Infineon | IMBG120R090M1HXTMA1

Manufacturer Part #

IMBG120R090M1HXTMA1

SiC, 1200V, 26A, 90MOHM, N-CHANNEL, PG-TO263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2348
Product Specification Section
Infineon IMBG120R090M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 26A
Input Capacitance: 763pF
Power Dissipation: 136W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,440.00
USD
Quantity
Unit Price
1,000
$3.44
2,000+
$3.40
Product Variant Information section