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Infineon Technologies | IMBG120R234M2HXTMA1

Manufacturer Part #

IMBG120R234M2HXTMA1

MOSFET SIC DISCRETE

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2347
Product Specification Section
Infineon Technologies IMBG120R234M2HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 8.1A
Input Capacitance: 290pF
Power Dissipation: 80W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
Total
$6.71
USD
Quantity
Unit Price
1
$6.71
10
$6.04
40
$5.64
150
$5.25
500+
$4.90
Product Variant Information section