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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMBG65R163M1HXTMA1

Infineon | IMBG65R163M1HXTMA1

Manufacturer Part #

IMBG65R163M1HXTMA1

650 V 17A 85W N-Channel SMT CoolSiCTM M1 SiC Trench Power MOSFET-PG-TO263-7-12

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2233
Product Specification Section
Infineon IMBG65R163M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 17A
Input Capacitance: 320pF
Power Dissipation: 85W
Operating Temp Range: -55°C to +175°C
Package Style:  PG-TO-263-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,890.00
USD
Quantity
Unit Price
1,000
$1.89
2,000
$1.88
3,000
$1.87
4,000+
$1.86
Product Variant Information section