
Manufacturer Part #
IMZC120R012M2HXKSA1
N-Channel 1200 V 129 A 12 mOhms 124 nC Through Hole SiC MOSFET TO-247-4
Product Specification Section
Infineon IMZC120R012M2HXKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMZC120R012M2HXKSA1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 129A |
Input Capacitance: | 4050pF |
Power Dissipation: | 480W |
Operating Temp Range: | -55°C to +175°C |
Package Style: | TO-247-4 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
12
USA:
12
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
1
$17.38
5
$17.14
20
$16.94
50
$16.81
125+
$16.55
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-4
Mounting Method:
Through Hole