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Manufacturer Part #

IMZC120R012M2HXKSA1

N-Channel 1200 V 129 A 12 mOhms 124 nC Through Hole SiC MOSFET TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2447
Product Specification Section
Infineon IMZC120R012M2HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 129A
Input Capacitance: 4050pF
Power Dissipation: 480W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$15.96
USD
Quantity
Unit Price
1
$15.96
5
$15.75
25
$15.55
50
$15.46
150+
$15.20
Product Variant Information section