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onsemi | NTH4L160N120SC1

Manufacturer Part #

NTH4L160N120SC1

N-Channel 1200 V 17.3 A 111 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2022
Product Specification Section
onsemi NTH4L160N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 17.3A
Input Capacitance: 665pF
Power Dissipation: 111W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
334
USA:
334
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4.91
USD
Quantity
Unit Price
1
$4.91
10
$4.80
40
$4.72
125
$4.64
400+
$4.50
Product Variant Information section