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onsemi | NTHL080N120SC1A

Manufacturer Part #

NTHL080N120SC1A

N-Channel 1200 V 31 A 178 W Through Hole Silicon Carbide MOSFET-TO-247-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2322
Product Specification Section
onsemi NTHL080N120SC1A - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 31A
Input Capacitance: 1112pF
Power Dissipation: 178W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
2,940
USA:
2,940
On Order:
0
Factory Stock:Factory Stock:
149,400
Factory Lead Time:
15 Weeks
Minimum Order:
240
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,660.80
USD
Quantity
Unit Price
450
$6.92
900+
$6.87
Product Variant Information section