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Manufacturer Part #

SCT20N120H

N-Channel 1200 V 20 A 239 mOhm Surface Mount MOSFET - H2PAK-2

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2426
Product Specification Section
STMicroelectronics SCT20N120H - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 20A
Input Capacitance: 650pF
Power Dissipation: 150W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263AB
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$5,270.00
USD
Quantity
Unit Price
1,000+
$5.27
Product Variant Information section