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Manufacturer Part #
SCT3120ALGC11
SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
ROHM SCT3120ALGC11 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Size Change
09/30/2022 Details and Download
Detailed description of change:Now: *On-board SiC chip's wafer diameter: 4inch - Front-end manufacturing plants : - ROHM Apollo Co., Ltd. Chikugo Plant After:*On-board SiC chip's wafer diameter: 6inch - Front-end manufacturing plants : - Lapis Semiconductor Co., Ltd. Miyazaki Plant Reason:To expand production capacity.
Part Status:
Active
Active
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ROHM SCT3120ALGC11 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain Current: | 21A |
| Input Capacitance: | 460pF |
| Power Dissipation: | 103W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
27 Weeks
Quantity
Unit Price
30
$5.15
90
$5.08
300
$5.01
600
$4.97
1,200+
$4.88
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole