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Manufacturer Part #

SCT4013DEC11

750 V 105 A 312 W Through Hole N-Channel SiC Power MOSFET-TO-247N

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM SCT4013DEC11 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 750V
Drain Current: 105A
Input Capacitance: 4580pF
Power Dissipation: 312W
Operating Temp Range: 175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$8,946.00
USD
Quantity
Unit Price
450+
$19.88
Product Variant Information section