Manufacturer Part #
QSE122
QSE122 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor
Product Specification Section
onsemi QSE122 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
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onsemi QSE122 - Technical Attributes
Attributes Table
Wavelength: | 880nm |
Angle of Half Sensitivity: | ±25° |
Power Dissipation: | 100mW |
CE Voltage-Max: | 30V |
Collector Current @ 25C: | 3mA |
Mounting Method: | Through Hole |
Features & Applications
The QSE122 is a 30 V 880 nm, Through Hole Plastic Silicon Infrared Phototransistor. Its Operating temperature ranges from -40 °C to 100 °C.
Features:
- NPN Silicon Phototransistor
- Package Type: Sidelooker
- Medium wide reception angle, 50°
- Package material and color: black epoxy
- Matched emitter: QEE113
- Daylight filter
- High sensitivity
Applications:
- Automation
- Building & Home Controls
- Medical Electronics/Devices
- Home Audio System Components
- Consumer Appliances
View the QSE1 Series of Phototransistors
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
31 Weeks
Quantity
Unit Price
500
$0.395
1,500
$0.39
2,000
$0.385
5,000
$0.38
7,500+
$0.375
Product Variant Information section
Available Packaging
Package Qty:
500 per Bag
Mounting Method:
Through Hole