

Diodes Incorporated DMWSH120H90SM4Q / DMWSH120H28SM4Q SiC MOSFETs
Enhance subsystem efficiency
The DMWSH120H90SM4Q and DMWSH120H28SM4Q by DIODES are automotive-compliant Silicon Carbide (SiC) MOSFETs designed to address the growing demand for SiC solutions in electric and hybrid-electric vehicles (EV/HEVs). These N-channel MOSFETs enable improved efficiency and higher power density in automotive subsystems, meeting the stringent requirements of modern EV/HEV applications. Both models operate reliably at voltages up to 1200VDS with a gate-source voltage (VGS) of +15/-4V, offering typical RDS(ON) values of 75mΩ and 20mΩ, respectively.
The DMWSH120H28SM4Q features a four-pin TO-247 package with a thermal resistance (RθJC) of 0.35°C/W, allowing for drain currents of up to 100A. This package also includes a Kelvin sense pin, which, when connected to the source pin, enhances gate control and optimizes device performance. These attributes make the DMWSH120H28SM4Q particularly suitable for high-power applications.
Both the DMWSH120H90SM4Q and DMWSH120H28SM4Q are equipped with robust body diodes that ensure fast switching times (tRR) and low reverse recovery charge (QRR). These characteristics minimize switching losses at high frequencies, contributing to the overall efficiency and performance of the system. With their advanced features, these SiC MOSFETs are ideal for next-generation EV/HEV powertrains and subsystems.
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