Microchip Silicon Carbide (SiC) Power Solutions Portfolio
Adopt SiC with ease, speed and confidence thanks to low system cost, fast time to market and low risk
Microchip is poised for rapid growth in the world of power electronics, with their robust Silicon Carbide (SiC) portfolio that is geared for industrial, energy and automotive applications.
With improved efficiency, superior power density and lower system costs, your next Silicon Carbide based design starts with Microchip’s full SiC guide that has you covered from A to Z.
Featured SiC Devices
AgileSwitch® Digital Programmable Gate Driver and SP6LI SiC Power Module Kit
With Augmented Switching™ technology and robust short-circuit protection, Microchip digital gate drivers are fully software configurable, prevent false faults, and mitigate ringing, Electromagnetic Interference (EMI), as well as overshoot and undershoot in SiC and IGBT power modules. With Microchip’s SiC gate drivers, you can adopt SiC with ease thanks to a fast time to market and high efficiency.
Silicon Carbide (SiC) Gate Drivers
Microchip features an extensive Silicon Carbide gate driver portfolio that provides a superior solution compared to standard analog drivers. They feature Augmented Switching™ technology and robust short-circuit protection, making them fully software configurable while preventing false faults and mitigating ringing, Electromagnetic Interference (EMI), as well as overshoot and undershoot in SiC and IGBT power modules.
Silicon Carbide (SiC) Discretes
The Microchip portfolio of SiC discretes offers the widest breadth of solutions on the market. With the unrivalled ruggedness and performance of their SiC devices and 30 years of experience in the development, design and support of power solutions, Microchip enables you to adopt SiC with ease, speed and confidence.
Silicon Carbide (SiC) Die
Microchip's SiC bare die MOSFETs are excellent options for advanced power circuits and provide the lowest system cost, fastest time to market and lowest risk. Those solutions come with an oxide lifetime of more than 100 years and a stable body diode, coupled with best-in-class avalanche ruggedness and performance, short circuit capability and neutron susceptibility.
Featured bare die products:
- 700V–3.3 kV, 17 mΩ–750 mΩ SiC MOSFETs
- 700V–3.3 kV, 10A–100A SiC Schottky Barrier Diodes (SBDs)