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ON Semiconductor NCD57252 Isolated Dual-Channel IGBT/MOSFET Gate Drivers

NCD(V)57252/3/5/6 are high-current dual-channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC-16 and narrow-body SOIC-16 packages.


  • High peak output current (±6.5 A, ±3.5 A)
  • Configurable as a dual low-side or dual high-side or half-bridge driver
  • Tight UVLO thresholds on all power supplies
  • 3.3 V, 5 V, and 15 V Logic Input
  • 2.5 or 5 kVrms galvanic isolation from input to each output and 1.5 kVrms differential voltage between output channels
  • Short propagation delays with accurate matching
  • Programmable overlap or dead time control programmable overlap or dead time control
  • Disable pin to turn off outputs for power sequencing
  • ANB function to offer flexibility to set up the driver as half-bridge driver operating with a single input signal
  • IGBT/MOSFET gate clamping during short circuit


  • Enables removal of buffer
  • Design flexibility
  • Consistent performance
  • Design flexibility
  • Meets safety requirements
  • Faster switching capability


  • Automotive applications
  • Industrial applications
  • EV chargers
  • Uninterruptible power supplies (UPS)
  • Industrial power supplies
  • Solar inverters