text.skipToContent text.skipToNavigation

 

 

Infineon

 

New Discrete 1,200V SiC MOSFETs Combine Low Losses and High Reliability

Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.

The new devices will help satisfy fast-growing demand for energy-efficient Silicon Carbide (SiC) MOSFETs in power-conversion applications. They provide new system-design flexibility in power factor correction circuits, bi-directional topologies, and any hard- or soft-switching DC-DC converters or DC-AC inverters.

The new discrete devices benefit from Infineon’s advanced trench SiC MOSFET semiconductor fabrication process, which produces devices notable for their low losses and high reliability. In addition, the CoolSiC MOSFETs feature gate-source operating voltages suitable for discrete packaged devices. Their low dynamic losses result in high efficiency with a simple unipolar gate-drive scheme.

Another unique advantage of the Infineon CoolSiC trench MOSFET technology is a high threshold voltage of >4V combined with low Miller capacitance. This means that CoolSiC MOSFETs offer much higher immunity to unwanted parasitic turn-on effects than other SiC MOSFETs on the market. Turn-on gatesource voltage is +18V with a 5V margin to a maximum rated voltage of +23V.

The new 1,200V CoolSiC MOSFETs in a TO247 package are available to order now in production volumes.

Features
  • Low device capacitance
  • Temperature-independent switching losses
  • Integral diode with low reverse-recovery charge
  • Threshold-free on-state characteristics
Applications
  • Solar inverters
  • Battery charging infrastructure
  • Energy storage solutions
  • Uninterruptible power supplies
  • Motor drives
  • Data center and telecoms power supplies

 

Infineon — Eice DRIVER Board

 

This evaluation board demonstrates the functionality and key features of the Infineon EiceDRIVER™ and CoolSiC™ MOSFET. It contains two gate drivers to drive two SiC MOSFET switches in a half-bridge configuration.

An additional gate driver is used to transfer over-current information through the isolation barrier between the high-voltage power side to the low-voltage input side.

A DC-DC converter provides galvanicallyisolated supply voltages for each driver stage.

 


 

Gate-Driver ICs Optimized for Fast-Switching 1,200V CoolSiC MOSFETs

Infineon provides a range of EiceDRIVER™ driver IC products suitable for use with its CoolSiC™ MOSFETs, which are capable of switching at extremely high frequency.

Together, CoolSiC MOSFETs and EiceDRIVER gate-driver ICs take full advantage of the superior characteristics of Silicon Carbide (SiC) technology: improved efficiency, space and weight savings, part count reduction and enhanced system reliability. This gives designers great scope to lower system cost, reduce operating expenses and total cost of ownership, and devise new solutions for an energy-smart world.

Infineon has now gone into volume production with its portfolio of 1,200V CoolSiC MOSFETs (see above). This portfolio includes:

  • IMW120R045M1 CoolSiC 1,200V, 45mΩ SiC MOSFET in a TO247-3 package
  • IMZ120R045M1 CoolSiC 1,200V, 45mΩ SiC MOSFET in a TO247-4 package

Infineon’s recommended EiceDRIVER parts for these SiC MOSFETs are:

  • 1EDI60H12AH
  • 1EDI30I12MF
  • 1ED020I12-F2
  • 1EDS20I12SV
  • 1EDI20I12SV
  • 1EDC20H12AH

 

Infineon — CoolSIC 1ED020I12-F2

 

FTM NA SideNav SubscribeTile EN
FTM NA Issue6-2019 SideNav Download