text.skipToContent text.skipToNavigation

 

 

Infineon

 

Infineon Technologies has developed Double DPAK (DDPAK), the industry’s first top-side-cooled surface-mount package suitable for high-voltage power semiconductors.

This new package technology enables the production of power devices such as MOSFETs and diodes which can perform fast switching and achieve high efficiency. This helps designers to reduce the size and weight of power systems at a lower total cost of ownership.

The development of the DDPAK package is a response to the demand for surface-mount power semiconductors in high-voltage power supplies. These devices require higher power capability and more efficiency in a smaller space. But thermal management of today’s surfacemount Switch-Mode Power Supply (SMPS) designs remains a barrier to efficiency.

The top-side-cooled DDPAK package provides an answer to this efficiency problem. The thermal decoupling of the PCB and the semiconductor enables higher power density and longer system lifetime.

Two families of Infineon devices demonstrate the advantages of the DDPAK technology in high-power system designs.

The 600V CoolMOS™ G7 superjunction MOSFET family provides efficiency, switching and density benefits in SMPS designs. Key features include:

  • Higher efficiency due to the improved CoolMOS G7 technology
  • Faster switching, a result of the package’s low parasitic source inductance of around 1nH, and its 4th pin Kelvin source configuration
  • Improved power density: the CoolMOS G7 MOSFETs are notable for their low onresistance. Compared to existing designs based on power switches in through-hole packages or on paralleled surface-mount packages, a CoolMOS-based design can handle higher power outputs in a smaller board footprint.
  • Production cost reduction and faster assembly results from the replacement of through-hole devices with surface-mount ICs

The 650V CoolSiC™ G6 Schottky diodes offer the best price-performance ratio and customer value in the market. The CoolSiC G6 diodes benefit from Infineon’s advanced silicon carbide (SiC) production facilities, a solid track record and outstanding production quality

 

Features
  • Very low 1.25V forward voltage
  • Best-in-class figure of merit (Qc x VF)
  • No reverse-recovery charge
  • Temperature-independent switching behavior
  • High dV/dt ruggedness
  • Optimized thermal behavior
Applications
  • Servers
  • Telecoms equipment
  • Solar power generation equipment
  • Power supplies for high-end PCs

 

FTM NA SideNav SubscribeTile EN
FTM NA Issue1-2019 SideNav Download