The FFSB10120A and FFSB20120A from ON Semiconductor are 1,200V Schottky diodes made from wide bandgap Silicon Carbide (SiC) material which provides superior switching performance and higher reliability than equivalent silicon diodes.
The FFSB10120A provides a maximum 10A output current and the FFSB20120A is rated for 20A. The switching losses incurred by SiC diodes are dramatically lower than those of silicon diodes, because SiC diodes have almost no reverse-recovery charge or time. The thermal characteristics of SiC-based diodes are also very attractive to power-system designers: the switching characteristics are constant over the operating-temperature range, and the maximum junction temperature of the FFSBx0120A diodes is 175°C.
The combination of fast switching capability, very low switching losses and high-temperature operation means that power-system designers can achieve very high efficiency and high power density. Fast switching allows for the use of smaller inductors and capacitors, and the high temperature capability can reduce or eliminate the need for cooling devices.
High surge current capacity means that these SiC diodes from ON Semiconductor are able to conduct more current in forward bias mode.