ON Semiconductor NCP51820 Gallium Nitride (GaN) Gate Driver
Ideal for GaN power switches
The NCP51820 is a high-speed gate driver which meets the demanding requirements of driving Gallium Nitride (GaN) power switches in offline half- and full-bridge power topologies. It is suitable for use with both the enhancement mode (e-mode) and Gate Injection Transistor (GIT) types of High-Electron Mobility Transistor (HEMT) GaN switches.
Power-system designers can use the NCP51820 to drive high-efficiency GaN switches in power topologies such as resonant converters, half-bridge and full-bridge converters, active clamp flyback converters, and bridgeless totem pole power factor correction.
The NCP51820 offers short and matched propagation delays. It is rated for a -3.5V to +650V common-mode voltage range on the high side. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal’s amplitude.
The NCP51820 offers important protection functions such as independent under-voltage lock-out and thermal shut-down. Programmable dead-time control can be configured to prevent cross-conduction.
The driver is supplied in a 15-pin, 4mm x 4mm QFN package.
Parts Available for Immediate Sampling
|Part Number||Configuration||Common-Mode Voltage Range||Package||Sample Request|
|NCP51820AMNTWG||Half-bridge||High-side: -3.5V to +650V |
Low-side: -3.5V to +3.5V
Evaluation Board – NCP51820GAN1GEVB
The NCP51820 GaN driver evaluation board is intended to replace the driver and power MOSFETs used in existing half- or full-bridge power supplies. The board demonstrates a way to efficiently and reliably drive two GaN power switches used in a high-voltage, totem pole circuit configuration.
|View all Issues of FTM|
Overview of WBG and SiC Capabilities