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Manufacturer Part #

NSF030120L4A0Q

N-Channel 1200 V 67 A 306 W Through Hole SiC MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2514
Product Specification Section
Nexperia NSF030120L4A0Q - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 67A
Input Capacitance: 2600pF
Power Dissipation: 306W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
300,150
USA:
300,150
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$195.30
USD
Quantity
Unit Price
30
$6.51
60
$6.48
90
$6.46
150
$6.43
300+
$6.37
Product Variant Information section