text.skipToContent text.skipToNavigation
  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. IGBTs
  6. NXH800H120L7QDSG

onsemi | NXH800H120L7QDSG

Manufacturer Part #

NXH800H120L7QDSG

NXH800H120L7QDSG: 1200 V 800 A Chassis Mount Qdual3 Half-Bridge IGBT Module

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
onsemi NXH800H120L7QDSG - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 1600A
Collector - Emitter Saturation Voltage: 1.65V
Turn-on Delay Time: 0.37µs
Turn-off Delay Time: 0.4µs
Qg Gate Charge: 5600nC
Leakage Current: 80nA
Input Capacitance: 94.3nF
Thermal Resistance: 0.0498°C/W
Operating Temp Range: -40°C to +175°C
No of Terminals: 11
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
24
Multiple Of:
24
Total
$4,769.52
USD
Quantity
Unit Price
24+
$198.73
Product Variant Information section