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onsemi | NXH800H120L7QDSG

Manufacturer Part #

NXH800H120L7QDSG

NXH800H120L7QDSG: 1200 V 800 A Chassis Mount Qdual3 Half-Bridge IGBT Module

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
onsemi NXH800H120L7QDSG - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 1600A
Collector - Emitter Saturation Voltage: 1.65V
Turn-on Delay Time: 0.37µs
Turn-off Delay Time: 0.4µs
Qg Gate Charge: 5600nC
Leakage Current: 80nA
Input Capacitance: 94.3nF
Thermal Resistance: 0.0498°C/W
Operating Temp Range: -40°C to +175°C
No of Terminals: 11
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
22
USA:
22
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$188.54
USD
Quantity
Unit Price
1
$188.54
3
$186.21
10
$183.69
20
$182.26
40+
$179.56
Product Variant Information section