text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Bipolar (BJT) Transistors
  6. MJD112RLG

onsemi | MJD112RLG

Manufacturer Part #

MJD112RLG

MJD112 Series NPN 1.75 W 100 V 2 A SMT Darlington Transistor - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi MJD112RLG - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 100V
Collector Current Max: 2A
Power Dissipation-Tot: 1.75W
Collector - Base Voltage: 100V
Collector - Emitter Saturation Voltage: 3V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 200
Collector - Current Cutoff: 20µA
Configuration: Single
Frequency - Transition: 25MHz
Operating Temp Range: -65°C to +150°C
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
3600
Multiple Of:
1800
Total
$1,332.00
USD
Quantity
Unit Price
1,800
$0.38
3,600+
$0.37
Product Variant Information section