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Manufacturer Part #

PBSS8110Z,135

PBSS8110Z Series 100 V 1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-223

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
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Product Specification Section
Nexperia PBSS8110Z,135 - Technical Attributes
Attributes Table
Polarity: NPN
Type: Small Signal
CE Voltage-Max: 100V
Collector Current Max: 1A
Power Dissipation-Tot: 0.65W
Collector - Base Voltage: 120V
Collector - Emitter Saturation Voltage: 0.2V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 80
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 100MHz
Operating Temp Range: -65°C to +150°C
Rise Time: 220ns
Fall Time: 185ns
Moisture Sensitivity Level: 1
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications
If your design has to keep power consumption and heat dissipation to a minimum, then NXP's low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).
Pricing Section
Global Stock:
0
USA:
0
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
8000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,640.00
USD
Quantity
Unit Price
4,000
$0.21
8,000+
$0.205
Product Variant Information section