text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSC010NE2LSIATMA1

Infineon | BSC010NE2LSIATMA1

Manufacturer Part #

BSC010NE2LSIATMA1

Single N-Channel 25 V 1.05 mOhm 59 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC010NE2LSIATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.05mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 59nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 6.3ns
Turn-off Delay Time: 32ns
Rise Time: 6.2ns
Fall Time: 4.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4200pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,375.00
USD
Quantity
Unit Price
5,000+
$0.675
Product Variant Information section