text.skipToContent text.skipToNavigation

Manufacturer Part #

BSC0502NSIATMA1

BSC0502NSI series 30V 100A 2.3 mOhm N-Ch SuperSO8 OptiMOS™ 5

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC0502NSIATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 19ns
Rise Time: 4ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 1200pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,150.00
USD
Quantity
Unit Price
5,000
$0.43
10,000
$0.425
15,000+
$0.415
Product Variant Information section