text.skipToContent text.skipToNavigation

Manufacturer Part #

BSP125H6433XTMA1

N-Channel 600 V 120 mA 1.8 W SMT SIPMOS Power-Transistor PG-SOT223-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSP125H6433XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 45Ω
Rated Power Dissipation: 1.8W
Qg Gate Charge: 4.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.12A
Turn-on Delay Time: 7.7ns
Turn-off Delay Time: 20ns
Rise Time: 14.4ns
Fall Time: 110ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Input Capacitance: 100pF
Series: SIPMOS
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$748.00
USD
Quantity
Unit Price
4,000
$0.187
8,000+
$0.183
Product Variant Information section