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Manufacturer Part #

BSZ065N06LS5ATMA1

N-Channel 60 V 9.4 mOhm 46 W OptiMOS Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ065N06LS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 6.5mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 14ns
Rise Time: 2.9ns
Fall Time: 2.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 1400pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,500.00
USD
Quantity
Unit Price
5,000
$0.30
10,000+
$0.295
Product Variant Information section