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Manufacturer Part #
DMN65D8LDW-7
Dual N-Channel 60 V 6 Ohm Surface Mount Enhancement Mode Mosfet - SOT363
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel | ||||||||||
| Date Code: | 2529 | ||||||||||
Product Specification Section
Diodes Incorporated DMN65D8LDW-7 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=DMN65D8LDW-7&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/dmn65d8ldw-7-diodes-incorporated-4023514
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=DMN65D8LDW-7&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/dmn65d8ldw-7-diodes-incorporated-4023514
Diodes Incorporated DMN65D8LDW-7 - Technical Attributes
Attributes Table
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 6Ω |
| Rated Power Dissipation: | 300|mW |
| Qg Gate Charge: | 0.87nC |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
3,000
$0.036
12,000
$0.035
30,000
$0.0343
75,000
$0.0337
120,000+
$0.0327
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel