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onsemi | FDS5670

Manufacturer Part #

FDS5670

N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2546
Product Specification Section
onsemi FDS5670 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 14mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 70nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS5670 is a 60 V 14 mΩ N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.   The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features:

  • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 6 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$3,200.00
USD
Quantity
Unit Price
2,500
$1.28
5,000+
$1.27
Product Variant Information section