Référence fabricant
FQD18N20V2TM
N-Channel 200 V 140 mOhm Surface Mount Mosfet - TO-252
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2525 | ||||||||||
onsemi FQD18N20V2TM - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi FQD18N20V2TM - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 140mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 26nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 15A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 38ns |
| Rise Time: | 133ns |
| Fall Time: | 62ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 830pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FQD18N20V2TM is a 200 V 140 mOhm Surface Mount N-Channel MOSFET - DPAK-3 & These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Features:
- 15 A, 200 V, RDS(on) = 0.14 W @VGS = 10 V
- Low gate charge ( typical 20 nC)
- Low Crss ( typical 25 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount